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參數資料
| 型號： | 2SK3030(TENTATIVE) |
| 廠商： | Panasonic Corporation |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 硅N溝道功率的F -場效應晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 24K |
| 代理商： | 2SK3030(TENTATIVE) |
1
Power F-MOS FETs
2SK3030 (Tentative)
Silicon N-Channel Power F-MOS FET
I
Features
G
Avalanche energy capacity guaranteed
G
High-speed switching
G
Low ON-resistance
G
No secondary breakdown
G
Low-voltage drive
G
High electrostatic breakdown voltage
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Symbol
unit: mm
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 80V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 4A
V
GS
= 4V, I
D
= 4A
V
DS
= 10V, I
D
= 4A
I
DR
= 8A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 30V, I
D
= 4A
V
GS
= 10V, R
L
= 7.5
min
100
1
3
typ
150
170
6
290
110
30
15
40
190
860
max
10
±10
2.5
230
260
1.5
12.5
125
Unit
μ
A
μ
A
V
V
m
m
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
100
±20
±8
±16
3.2
10
1
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 0.1mH, I
L
= 8A, 1 pulse
6.5±0.1
5.3±0.1
4.35±0.1
4.6±0.1
2.3±0.1
0.75±0.1
1
2
3
0.93±0.1
2
0
1
7
1
2.3±0.1
0.5±0.1
0.5±0.1
0.1±0.05
1.0±0.1
1: Gate
2: Drain
3: Source
U Type Package
Internal Connection
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3031 | Silicon N-Channel Power F-MOS FET |
| 2SK3032 | Silicon N-Channel Power F-MOS FET |
| 2SK3033 | Silicon N-Channel Power F-MOS FET |
| 2SK3034 | Silicon N-Channel Power F-MOS FET |
| 2SK3035 | Silicon N-Channel Power F-MOS FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3031 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3031(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK3031 (Tentative) - N-Channel Power F-MOS FET |
| 2SK303100L | 功能描述:MOSFET N-CH 100V 15A UG-1 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3032 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK303-2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 600UA I(DSS) | TO-236AB |
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