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參數(shù)資料
| 型號(hào)： | 2SK3046 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET |
| 中文描述： | 7 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 45K |
| 代理商： | 2SK3046 |
1
Power F-MOS FETs
2SK3046
Silicon N-Channel Power F-MOS FET
unit: mm
I
Features
G
Avalanche energy capacity guaranteed: EAS > 130mJ
G
V
GSS
= ±30V guaranteed
G
High-speed switching: t
f
= 60ns
G
No secondary breakdown
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
DS
= 400V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 4A
V
DS
= 25V, I
D
= 4A
I
DR
= 7A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 5A
V
DD
= 150V, R
L
= 30
min
500
2
3
typ
0.7
5
1200
160
70
30
70
140
60
max
0.1
±1
5
1
1.6
Unit
mA
μ
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
500
±30
±7
±14
130
40
2
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 5.4mH, I
L
= 7A, 1 pulse
1
9.9±0.3
1
1
4
4.6±0.2
2.9±0.2
0.8±0.1
1.4±0.2
1.6±0.2
2
3
φ
3.2±0.1
2.6±0.1
0.55±0.15
2.54±0.3
5.08±0.5
3
1: Gate
2: Drain
3: Source
TO-220D Package
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| 2SK3047 | 功能描述:MOSFET N-CH 800V 2A TO-220D RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3048 | 功能描述:MOSFET N-CH 600V 3A TO-220D RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3049 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK304C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 600UA I(DSS) | SPAK |
| 2SK304D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 1.2MA I(DSS) | SPAK |
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