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參數(shù)資料
型號: 2SK3057-AZ
元件分類: JFETs
英文描述: 45 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOLATED TO-220, 3 PIN
文件頁數(shù): 1/8頁
文件大小: 65K
代理商: 2SK3057-AZ
1998, 2001
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13096EJ2V0DS00 (2nd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3057 product is N-Channel MOS Field Effect
Transistor designed for high current switching application.
FEATURES
Low on-state resistance
RDS(on)1 = 17 m
MAX. (VGS = 10 V, ID = 23 A)
RDS(on)2 = 27 m
MAX. (VGS = 4 V, ID = 23 A)
Low Ciss: Ciss = 2100 pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20, –10
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±45
A
Drain Current (pulse)
Note1
ID(pulse)
±150
A
Total Power Dissipation (TC = 25°C)
PT
30
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
22.5
A
Single Avalanche Energy
Note2
EAS
50.6
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3057
Isolated TO-220
(Isolated TO-220)
5
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