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參數(shù)資料
| 型號(hào)： | 2SK3061 |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 64K |
| 代理商： | 2SK3061 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK3061
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D13100EJ1V0DS00 (1st edition)
March 1999 NS CP(K)
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
Low on-state resistance
R
DS(on)1
= 8.5 m
MAX. (V
GS
= 10
V, I
D
= 35
A)
R
DS(on)2
= 12 m
MAX. (V
GS
= 4.0
V, I
D
= 35
A)
Low C
iss
: C
iss
= 5200
pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
±
20
V
Gate to Source Voltage
V
GSS(DC)
+20, –10
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±
70
±
280
A
I
D(pulse)
A
Total Power Dissipation (T
C
= 25°C)
P
T
35
W
Total Power Dissipation (T
A
= 25°C)
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
35
A
E
AS
122.5
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Starting T
ch
= 25
°C, R
G
= 25
, V
GS
= 20
V
→
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
3.57
°C/W
Channel to Ambient
R
th(ch-A)
62.5
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3061
Isolated TO-220
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3065 | Small switching (60V, 2A) |
| 2SK3069 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076L | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3061-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-220 Bulk |
| 2SK3062 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3062(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3062-S | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3062-Z | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB |
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