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參數(shù)資料
| 型號(hào)： | 2SK3079A |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 2SK3079A |
2SK3079A
2002-01-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3079A
470 MHz Band Amplifier Applications
Output power: P
o
= 33.50dBmW (2.2 W) (min)
Gain: G
p
= 13.50dB (min)
Drain Efficiency:
η
D = 50.0% (min)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
10
V
Gate-source voltage
V
GSS
3
V
Drain current
I
D
3
A
Power dissipation
P
D
(Note 1)
20.0
W
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
45~150
°C
Note 1: Tc = 25°C
Marking
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
P
O
33.5
dBmW
Drain efficiency
η
D
50.0
%
Power gain
G
p
V
DS
= 4.5 V, Iidle = 50 mA
(V
GS
adjust)
f = 470 MHz, P
i
= 20dBmW
Z
G
= Z
L
50
13.5
dB
Threshold voltage
V
th
V
DS
= 4.5 V, I
D
= 0.5 mA
0.8
V
Drain cut-off current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
10
μA
Gate-source leakage current
I
GSS
V
GS
= 5 V, V
DS
= 0 V
5
μA
Load mismatch
(Note 2)
V
DS
= 5 V, f = 470 MHz,
P
i
= 20dBmW,
P
o
= 33.5dBmW (V
GS
adjust)
VSWR LOAD 10:1 all phase
No degradation
Caution: This is transistor the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-5N1A
Preliminary
UD F
**
Type Name
Dot
Lot No.
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