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參數(shù)資料
| 型號(hào)： | 2SK3090(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 175K |
| 代理商： | 2SK3090(2-10S1B) |
2SK3090
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSVI)
2SK3090
Chopper Regulator DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 16 m (typ.)
High forward transfer admittance
: |Yfs| = 26 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 30 V)
Enhancement mode
: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
30
V
Draingate voltage (RGS = 20 k)
VDGR
30
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
45
Drain current
Pulse (Note 1)
IDP
135
A
Drain power dissipation (Tc = 25°C)
PD
60
W
Single pulse avalanche energy
(Note 2)
EAS
220
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.08
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 , IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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