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參數(shù)資料
| 型號： | 2SK3105 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 62K |
| 代理商： | 2SK3105 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3105
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D13293EJ1V0DS00 (1st edition)
June 1999 NS CP(K)
DESCRIPTION
The 2SK3105 is a switching device which can be driven
directly by a 4
V power source.
The 2SK3105 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 4
V power source
Low on-state resistance
R
DS(on)1
= 95 m
MAX. (V
GS
= 10
V, I
D
= 1.5
A)
R
DS(on)2
= 135 m
MAX. (V
GS
= 4.5
V, I
D
= 1.5 A)
R
DS(on)3
= 150 m
MAX. (V
GS
= 4.0
V, I
D
= 1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3105
3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±2.5
±10
0.2
1.25
150
V
V
A
A
W
W
°C
°C
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Storage Temperature
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on FR4 Board, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
0.95
0
+
–
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XA
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3107 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK3108 | Switching N-channel power MOS FET industrial use |
| 2SK3109 | Switching N-channel power MOS FET industrial use |
| 2SK3109-S | Switching N-channel power MOS FET industrial use |
| 2SK3109-ZJ | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3105-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 2.5A 3-Pin Thin-Type Mini-Mold T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 2.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape |
| 2SK3107 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK3107(T1-A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC75 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SK3107-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,30V,0.1A,8.0ohm,USM3 |
| 2SK3108 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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