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參數(shù)資料
| 型號： | 2SK3111-S |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | FIN CUT, MP-25, TO-262, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 71K |
| 代理商： | 2SK3111-S |
1998, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3111
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D13334EJ2V0DS00 (2nd edition)
Date Published
May 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3111 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 180 m
MAX. (VGS = 10 V, ID = 10 A)
Low input capacitance
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to source voltage (VGS = 0 V)
VDSS
200
V
Gate to source voltage (VDS = 0 V)
VGSS
±30
V
Drain current (DC) (TC = 25 °C)
ID(DC)
±20
A
Drain current (pulse)
Note1
ID(pulse)
±60
A
Total power dissipation (TA = 25 °C)
PT1
1.5
W
Total power dissipation (TC = 25 °C)
PT2
65
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Single avalanche current
Note2
IAS
20
A
Single avalanche energy
Note2
EAS
100
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25
, VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3111
TO-220AB
2SK3111-S
TO-262
2SK3111-ZJ
TO-263
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3112-AZ | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3113B-ZK-E2-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3113 | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3114B-S17-AY | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116B-S19-AY | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3111-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3112 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3112-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 25A 110m@10V TO220AB Bulk |
| 2SK3112S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262AA |
| 2SK3112-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
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