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參數(shù)資料
| 型號(hào)： | 2SK3125 |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-16H1A, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 186K |
| 代理商： | 2SK3125 |
2SK3125
2008-12-22
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3125
DC-DC Converter, Relay Drive and
Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 5.3 m (typ.)
High forward transfer admittance: |Yfs| = 60 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
Enhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
70
Drain current
Pulse
(Note 1)
IDP
210
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
955
mJ
Avalanche current
IAR
70
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 140 μH, RG = 25 Ω, IAR = 70 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16H1B
Weight: 3.65 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK3125_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications |
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| 2SK3126(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 450V 10A 3-Pin(3+Tab) TO-220NIS |
| 2SK3126(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH, 450V, 10A - Rail/Tube |
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