- 您現在的位置：買賣IC網 > PDF目錄33495 > 2SK3127(2-10S1B) 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2SK3127(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10S1B, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 132K |
| 代理商： | 2SK3127(2-10S1B) |
2SK3127
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π-MOS VI)
2SK3127
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Low drain-source ON resistance: RDS (ON) = 9.5 m (typ.)
High forward transfer admittance: |Yfs| = 38 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 30 V)
Enhancement-mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC (Note 1)
ID
45
Drain current
Pulse (Note 1)
IDP
135
A
Drain power dissipation (Tc
= 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
524
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Please use devices on condition that the channel temperature is
below 150
°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 186 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum junction
temperature.
Note 4: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.92
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3134(S) | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3134(L) | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3134(L) | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3135(L) | 0.012 ohm, POWER, FET |
| 2SK3135(L) | 0.012 ohm, POWER, FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3127-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3128 | 功能描述:MOSFET N-CH 30V 60A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3128(Q) | 功能描述:MOSFET MOSFET N-Ch 30V 60A Rdson 0.012 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3128_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK3128_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
發布緊急采購，3分鐘左右您將得到回復。