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參數資料
| 型號： | 2SK3157 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數： | 8/9頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 2SK3157 |
2SK3157
8
10.0 ± 0.3
7.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
5
2
1
2.8 ± 0.2
2.5 ± 0.2
4.45 ± 0.3
2.7
0
0.5 ± 0.1
1
1
3.2 ± 0.2
φ
Hitachi Code
EIAJ
JEDEC
TO–220FM
SC–67
—
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3158 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3159 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3161 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3161L | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3161S | Silicon N Channel MOS FET(N溝道MOSFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3157-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 20A 3-Pin(3+Tab) TO-220FM Box |
| 2SK3158 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3158-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3159 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3159(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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