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參數資料
| 型號： | 2SK3159 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2SK3159 |
2SK3159
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
Value at Tch = 25
°
C, Rg
≥
50
Electrical Characteristics (Ta = 25
°
C)
Note: 4. Pulse test
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
150
±
20
50
200
50
50
187
125
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
S
150
Gate to source breakdown voltage V
(BR)GS
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
—
—
1.0
—
—
27
—
—
—
—
—
—
—
—
—
—
—
—
23
28
45
4000
1650
590
30
280
830
450
0.95
200
±
10
10
2.5
30
48
—
—
—
—
—
—
—
—
—
—
μ
A
μ
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
V
ns
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 150 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V
Note4
I
D
= 25 A, V
GS
= 4 V
Note4
I
D
= 25 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 25 A, V
GS
= 10 V
R
L
= 1.2
I
F
= 50 A, V
GS
= 0
I
F
= 50 A, V
GS
= 0
diF/ dt = 50 A/
μ
s
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3159(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3159-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK315E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | SPAK |
| 2SK315F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK315G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SPAK |
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