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參數資料
| 型號： | 2SK3210L |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 157K |
| 代理商： | 2SK3210L |
Rev.3.00 Sep. 30, 2004 page 1 of 8
2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0414-0300
(Previous ADE-208-760A (Z))
Rev.3.00
Sep. 30, 2004
Features
Low on-resistance
RDS = 40 m
typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
Drain peak current
ID (pulse)
Note1
120
A
Body-drain diode reverse drain current
IDR
30
A
Avalanche current
IAP
Note3
30
A
Avalanche energy
EAR
Note3
67
mJ
Channel dissipation
Pch
Note2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10ms, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3210STL | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3214 | 10 A, 200 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3217-01MR | 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK322-P | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK322-S | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3210S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3210S-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3210STL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3211(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262VAR |
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