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參數資料
| 型號： | 2SK3216-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOS-FET |
| 中文描述： | 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 142K |
| 代理商： | 2SK3216-01 |
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation Ta=25°C
Tc=25°C
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
P
D
T
ch
T
stg
Rating
100
±50
±200
±30
464
Unit
V
A
A
V
mJ
W
W
°C
°C
1.67
135
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3216-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=100V
V
V
GS
=0V Tch=125°C
=±30V
DS
=0V
V
GS
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=50A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
100
2.5
3.0
1
0.1
10
20
16.0
32.0
3200
760
230
23
130
110
65
50
0.97
150
0.80
V
V
μA
mA
nA
m
S
pF
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.93
75.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
L=100μH T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
*1 L=298μH, Vcc=24V
3.5
100
0.5
100
25
4800
1140
345
35
195
165
100
1.46
TO-220AB
3.
Source
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相關代理商/技術參數 |
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|---|---|
| 2SK3216-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3217-01MR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STD MOSFET |
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| 2SK3218-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3218-01SC | 制造商:Fuji Electric 功能描述: |
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