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參數(shù)資料
型號: 2SK3224-Z
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/4頁
文件大小: 39K
代理商: 2SK3224-Z
1999
MOS FIELD EFFECT TRANSISTOR
2SK3224
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D13797EJ1V0DS00 (1st edition)
May 1999 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-State Resistance
R
DS(on)1
= 40 m
MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 60 m
MAX. (V
GS
= 4.0 V, I
D
= 10 A)
Low C
iss
: C
iss
= 790 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
±20
V
Gate to Source Voltage
V
GSS(DC)
+20,
10
V
Drain Current (DC)
Drain Current (Pulse)
Note1
I
D(DC)
±20
A
I
D(pulse)
±70
A
Total Power Dissipation (T
C
= 25°C)
P
T
25
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
10
A
E
AS
10
mJ
Notes 1.
PW
10
μ
s, Duty cycle
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
,
V
GS
= 20 V
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
5.0
°C/W
Channel to Ambient
R
th(ch-A)
125
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3224
TO-251
2SK3224-Z
TO-252
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