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參數(shù)資料

2SK3229

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-766(Z)

Target specification 1st. Edition

Dec. 1998

Features

Low on-resistance

DS(on) = 6m typ.

Low drive current

4V gate drive device can be driven from 5V source

Outline

1. Gate

2. Drain

3. Source

TO–220CFM

相關(guān)PDF資料	PDF描述
2SK322WR	50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK322WQ	50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK322WT	50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK322WS	50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK322WP	50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
2SK3229(E)	制造商:Renesas 功能描述:Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220CFM Magazine
2SK3229-E	制造商:Renesas 功能描述:Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220CFM Magazine
2SK323	制造商:未知廠家制造商全稱:未知廠家功能描述:
2SK3230	制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
2SK3230B	制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

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