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參數資料
| 型號： | 2SK3262-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOS-FET |
| 中文描述： | 20 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 138K |
| 代理商： | 2SK3262-01MR |
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation Ta=25°C
Tc=25°C
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
P
D
T
ch
T
stg
Rating
200
±20
±80
±20
355
Unit
V
A
A
V
mJ
W
W
°C
°C
2
45
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3262-01MR
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=200V
V
V
GS
=0V Tch=125°C
=±20V
DS
=0V
V
GS
I
D
=10A V
GS
=4V
I
D
=10A V
GS
=10V
I
D
=10A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=100V I
D
=20A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
200
1.0
1.5
10
0.2
10
110
85
9.0
19.0
1700
290
185
10
45
225
120
20
0.93
250
2.90
V
V
μA
mA
nA
m
S
pF
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
2.78
62.5
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
L=100μH T
ch
=25°C
I
F
=20A V
GS
=0V T
ch
=25°C
I
F
=20A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
*1 L=1.6mH, Vcc=24V
2.0
500
0.5
100
150
100
2550
435
280
15
70
340
180
1.40
TO-220F15
3. Source
2.54
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| 2SK3264-01MR | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:POWER MOSFET |
| 2SK3264-01MRSC | 制造商:Fuji Electric 功能描述: |
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| 2SK3265(F,T) | 功能描述:MOSFET MOSFET N-Ch, 700V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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