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參數資料
型號: 2SK3265
元件分類: JFETs
英文描述: 10 A, 700 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件頁數: 1/6頁
文件大小: 428K
代理商: 2SK3265
2SK3265
2005-07-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3265
Chopper Regulators DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.72 (typ.)
High forward transfer admittance
: |Yfs| = 7.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 700 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
700
V
Draingate voltage (RGS = 20 k)
VDGR
700
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
10
A
Drain current
Pulse (Note 1)
IDP
30
A
Drain power dissipation
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
420
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相關PDF資料
PDF描述
2SK3272-01L 80 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3272-01SJ 80 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3274(L) 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3274(S) 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3274(S) 30 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
2SK3265(F) 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,700/10A/1.0ohm,TO-220NIS
2SK3265(F,T) 功能描述:MOSFET MOSFET N-Ch, 700V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3265_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulators DC−DC Converter and Motor Drive Applications
2SK3265_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulators DC−DC Converter and Motor Drive Applications
2SK3268 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-channel power MOSFET
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