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參數資料
| 型號： | 2SK3299-ZJ |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 79K |
| 代理商： | 2SK3299-ZJ |
Data Sheet D14060EJ1V0DS00
6
2SK3299
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
1m
10m
100
L - Inductive Load - H
I
A
1.0
10
0.1
10
μ
μ
R
G
= 25
V
DD
= 150 V
V
= 20
V
→
0 V
Starting T
ch
= 25
C
E
AS
= 66.7 mJ
I
AS
= 10 A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75
150
125
Starting Tch - Starting Channel Temperature -
C
E
50
100
25
V
DD
=
150
V
R
G
=
25
V
GS
=
20
V
→
0
V
I
AS
≤
10
A
0
20
40
60
80
100
120
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK33 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK330 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
| 2SK330_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
| 2SK3301 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulatorand DC-DC Converter Applications |
| 2SK3301(Q) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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