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參數(shù)資料
| 型號(hào)： | 2SK3316 |
| 廠(chǎng)商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類(lèi)型 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 261K |
| 代理商： | 2SK3316 |
2SK3316
2002-07-03
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3316
Switching Regulator Applications
Fast reverse recovery time
Built
in high
speed free
wheeling diode
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
Enhancement
mode
Maximum Ratings
(Ta = 25°C)
: t
rr
= 60 ns (typ.)
: R
DS (ON)
=
1
.6
(typ.)
: |Y
fs
| = 3.8 S (typ.)
: I
DSS
=
1
00 μA (max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
500
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
500
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
5
A
Drain current
Pulse (Note 1)
I
DP
20
A
Drain power dissipation (Tc = 25°C)
P
D
35
W
Single pulse avalanche energy
(Note 2)
E
AS
180
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy (Note 3)
E
AR
3.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
3.57
°C / W
Thermal resistance, channel to
ambient
R
th
(ch
a)
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 12.2 mH, R
G
= 25
, I
AR
= 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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