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參數資料
| 型號： | 2SK3373 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 198K |
| 代理商： | 2SK3373 |
2SK3373
2010-04-13
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3373
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 2.9 (typ.)
High forward transfer admittance: |Yfs| = 1.7 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
2
Pulse (t
= 1 ms)
(Note 1)
IDP
5
Drain current
Pulse (t
= 100 μs)
(Note 1)
IDP
12
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
112
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1.1
± 0.2
0.
1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.
3
1.
2M
A
X
.
1.
5
±
0.
2
6.5
± 0.2
1
2
3
0.6 MAX.
5.
5
±
0.
2
0.6
± 0.15
2.
3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
（
HEAT SIN K）
3. SOURSE
3
2
1
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3373(TE16L1,NQ) | 功能描述:MOSFET MOSFET N-Ch 500V 2A Rdson=3.2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3373_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications |
| 2SK3373_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3374 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) |
| 2SK3374_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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