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參數(shù)資料
| 型號： | 2SK3376TV |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | VESM2, 2-1H1A, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 151K |
| 代理商： | 2SK3376TV |
2SK3376TV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376TV
For ECM
Application for Ultra-compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD
100
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
IDSS CLASSIFICATION
A-Rank
80 to 200A
B-Rank
170 to 300A
C-Rank
270 to 480A
BK-Rank
150 to 350A
Marking
Equivalent Circuit
Precaution
There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use
it as a terminal.
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1H1A
Weight: 0.8mg (typ.)
VESM2
1.Drain
2.Source
3.Gate
1.2±0.05
0.8±0.05
1.
2±
0.
05
0.
8±
0.
1
0.
3±
0.
05
1
2
3
0.
4
0.
4
0.
2±
0.
05
0.
28±
0.
02
0.
09±
0.
03
Type Name
Top Gate
IDSS Classification Symbol
A :A-Rank
B :B-Rank , BK-Rank
C :C-Rank
3
□
Lot Code
D
G
S
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3377-Z-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3377 | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3377-Z-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3377-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3377-Z | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3377 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3377-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,20A,35m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-251 |
| 2SK3377-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3377-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) TO-252 |
| 2SK3377-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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