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參數資料
| 型號： | 2SK3391JXTL-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SC-62, UPAK-3 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 233K |
| 代理商： | 2SK3391JXTL-E |
REJ03G0209-0300 Rev.3.00 Nov 08, 2007
Page 1 of 9
2SK3391
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0209-0300
Rev.3.00
Nov 08, 2007
Features
High power output, High gain, High efficiency
PG = 18 dB, Pout = 1.6 W,
ηadd = 58% min. (f = 836 MHz)
Compact package capable of surface mounting
Outline
1
2
3
4
1. Gate
2. Source
3. Drain
4. Source
1
3
2, 4
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK
)
R
Note:
Marking is “JX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
17
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
0.3
A
Drain peak current
ID(pulse)
Note1
0.75
A
Channel dissipation
Pch
Note2
5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
< 1sec, Tch < 150°C
2. Value at Tc = 25°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
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