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參數資料
| 型號： | 2SK3399(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S2B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 240K |
| 代理商： | 2SK3399(2-10S2B) |
2SK3399
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3399
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.54 (typ)
High forward transfer admittance: |Yfs| = 5.2 S (typ)
Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)
Enhancementmode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 k)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse
(Note 1)
IDP
40
A
Drain power dissipation (Tc
= 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
363
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH,
RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3399-SM(Q) | 制造商:Toshiba 功能描述:Cut Tape |
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| 2SK3402 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3402-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 36A 3-Pin(3+Tab) TO-251 Bulk |
| 2SK3402-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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