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參數資料
| 型號： | 2SK3418-E |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 117K |
| 代理商： | 2SK3418-E |
Rev.2.00 Sep. 10, 2004 page 1 of 7
2SK3418
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0407-0200
(Previous ADE-208-941 (Z))
Rev.2.00
Sep.10.2004
Features
Low on-resistance
RDS(on) = 4.3 m
typ.
Capable of 4 V gate drive
High speed switching
Outline
TO-220AB
1
2
3
D
G
S
1. Gate
2. Drain
(Flange)
3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
85
A
Drain peak current
ID (pulse)
Note1
340
A
Body-drain diode reverse drain current
IDR
85
A
Avalanche current
IAP
Note3
60
A
Avalanche energy
EAR
Note3
308
mJ
Channel dissipation
Pch
Note2
110
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
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| 2SK3419 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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