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參數資料
型號: 2SK3437
廠商: Toshiba Corporation
元件分類: DC/DC變換器
英文描述: DC-DC Converter, Relay Drive and Motor Drive Applications
中文描述: 的DC - DC轉換器,繼電器驅動器和電機驅動應用
文件頁數: 1/6頁
文件大小: 246K
代理商: 2SK3437
2SK3437
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3437
DC-DC Converter, Relay Drive and Motor Drive
Applications
Low drain-source ON resistance: R
DS (ON)
= 0.74
(typ.)
High forward transfer admittance: |Y
fs
| = 4.5 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 600 V)
Enhancement mode: V
th
= 3.0~5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
600
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
600
V
Gate-source voltage
V
GSS
±
30
V
DC (Note 1)
I
D
10
Drain current
Pulse
(Note 1)
I
DP
30
A
Drain power dissipation (Tc
=
25°C)
P
D
80
W
Single pulse avalanche energy
(Note 2)
E
AS
252
mJ
Avalanche current
I
AR
10
A
Repetitive avalanche energy (Note 3)
E
AR
8
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.56
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
4.41 mH, R
G
=
25
,
I
AR
=
10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相關PDF資料
PDF描述
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2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
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相關代理商/技術參數
參數描述
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