- 您現在的位置：買賣IC網 > PDF目錄33499 > 2SK3479-ZJ 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF資料下載
參數資料
| 型號： | 2SK3479-ZJ |
| 元件分類： | JFETs |
| 英文描述： | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 76K |
| 代理商： | 2SK3479-ZJ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000, 2001
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D15077EJ1V0DS00 (1st edition)
Date Published
July 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 11 m
MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 m
MAX. (VGS = 4.5 V, ID = 42 A)
Low Ciss: Ciss = 11000 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±83
A
Drain Current (pulse)
Note1
ID(pulse)
±332
A
Total Power Dissipation (TC = 25°C)
PT1
125
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
65
A
Single Avalanche Energy
Note2
EAS
422
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25
, VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3479
TO-220AB
2SK3479-S
TO-262
2SK3479-ZJ
TO-263
2SK3479-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3479-AZ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3479-Z-AZ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3479-Z | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3480-S | 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3480-Z-AZ | 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3479-ZJ-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3479-ZJ-E1-AZ | 功能描述:MOSFET N-CH 100V 83A TO-263 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3480 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3480-AZ | 功能描述:MOSFET N-CH 100V MP-25/TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3480-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
發布緊急采購，3分鐘左右您將得到回復。