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參數(shù)資料
| 型號： | 2SK3483-Z-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 28000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 164K |
| 代理商： | 2SK3483-Z-AZ |
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MOS FIELD EFFECT TRANSISTOR
2SK3483
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 52 m
MAX. (VGS = 10 V, ID = 14 A)
RDS(on)2 = 59 m
MAX. (VGS = 4.5 V, ID = 14 A)
Low Ciss: Ciss = 2300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0V)
VDSS
100
V
Gate to Source Voltage (VDS = 0V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±28
A
Drain Current (Pulse)
Note1
ID(pulse)
±60
A
Total Power Dissipation (TC = 25°C)
PT
40
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
25
A
Single Avalanche Energy
Note2
EAS
62.5
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 , VGS = 20
→ 0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3483
TO-251 (MP-3)
2SK3483-Z
TO-252 (MP-3Z)
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PDF描述 |
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| 2SK3484-Z | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3484-Z-AZ | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SD1861TV2 | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SK2415 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK2935 | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3483-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3483-Z-E2-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3484 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3484-AZ | 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3484-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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