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參數資料
| 型號： | 2SK3490 |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 30 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PCP, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 38K |
| 代理商： | 2SK3490 |
2SK3490
No.9085-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Semiconductors
DATA SHEET
82506 MS IM TC-00000128 / 82605PA MS IM TA-100579
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SK3490
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
8A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
32
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (600mm2!0.8mm)
1.5
W
Tc=25
°C
3.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=4A
4.8
8
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=4A, VGS=10V
30
39
m
RDS(on)2
ID=2A, VGS=4V
40
56
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
690
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
160
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
88
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
60
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
27
ns
Fall Time
tf
See specified Test Circuit.
32
ns
Marking : LG
Continued on next page.
Ordering number : EN9085A
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3490-TD-E | 制造商:SANYO 功能描述:Nch 30V 8A 39m@10V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 30V 8A SOT89 制造商:Sanyo 功能描述:0 |
| 2SK3491 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3491-TL-E | 制造商:SANYO 功能描述:Nch 600V 1A 0.011 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 600V 1A TO-251 制造商:Sanyo 功能描述:0 |
| 2SK3491TP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR |
| 2SK3491TP-FA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-252VAR |
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