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參數資料
| 型號： | 2SK3511-Z |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關N溝道功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | 2SK3511-Z |
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confirm that this is the latest version.
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availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D15617EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)
= 12.5
m
MAX. (V
GS
= 10 V, I
D
= 42 A)
Low C
iss
: C
iss
= 5900
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
75
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±
83
A
I
D(pulse)
±
260
A
Total Power Dissipation (T
C
= 25°C)
P
T
100
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
E
AS
52
250
A
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 35 V, R
G
= 25
,
V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
1.25
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A
)
83.3
°
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3511
TO-220AB
2SK3511-S
TO-262
2SK3511-ZJ
TO-263
2SK3511-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
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