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參數(shù)資料
| 型號： | 2SK3517-01 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 113K |
| 代理商： | 2SK3517-01 |
2
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
R
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0.1
1
10
0.1
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
Characteristics
2SK3502-01MR
FUJI POWER MOSFET
ID=f(VDS):80μs Pulse test,Tch=25°C
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
2
4
6
8
10
12
VDS [V]
14
16
18
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
22
20V
10V
8V
7.5V
7.0V
I
Typical Output Characteristics
VGS=6.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3518-01MR | STD MOSFET |
| 2SK3526-01L | STD MOSFET |
| 2SK3526-01S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3529-01 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3531-01 | STD MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3517-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3518-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3518-01R | 制造商:Fuji Electric 功能描述:MOSFET, Standard; N-Channel; 600 V; 16 A (Max.); 64 A (Max.) |
| 2SK3519-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.65Ohm;ID +/-9A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK352 | 制造商:HIT 功能描述:2SK352 HIT S3B2A |
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