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參數資料
| 型號： | 2SK3522 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | N溝道功率MOSFET硅 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 109K |
| 代理商： | 2SK3522 |
1
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
*3 I
F
-I
D
, -di/dt=50A/μs, Vcc=
DSS
, Tch=
=
Ratings
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
500
500
±21
±84
±30
21
400
20
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
5
2.50
220
+150
-55 to +150
Operating and storage
temperature range
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3522-01
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=500V V
GS
=0V
DS
=400V V
GS
=0V
V
GS
I
D
=10.5A V
GS
=10V
I
D
=10.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=10.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
500
3.0
V
V
μA
nA
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.568
50.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
CC
=300V
I
D
=21A
V
GS
=10V
L=1.67mH T
ch
=25°C
I
F
=21A V
GS
=0V T
ch
=25°C
I
F
=21A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
0.26
10
0.20
22
2280
320
16
27
37
75
11
54
16
20
11
3420
480
24
41
56
113
17
81
24
30
21
0.98
0.7
10.0
1.50
Outline Drawings
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
*1 L=1.67mH, Vcc=50V *2 Tch=
*4 VDS<
GS
=-30V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3522-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.2Ohm;ID +/-25A;TO-247;PD 335W;VGS +/-30V |
| 2SK3522-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3523-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3524-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.93Ohm;ID +/-8A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK3525 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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