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參數資料
| 型號： | 2SK3533-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2SK3533-01 |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900
VDSX *5
900
Continuous drain current
ID
±7
Pulsed drain current
ID(puls]
±28
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
7
Maximum Avalanche Energy
EAS
*1
269.5
Maximum Drain-Source dV/dt
dVDS/dt *4
40
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
PD
Ta=25°C
2.02
Tc=25°C
225
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3533-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V
ID=3.5A
VGS=10V
ID=3.5A
VDS=25V
VCC=600V ID=3.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.560
62.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=450V
ID=7A
VGS=10V
L=10.1mH Tch=25°C
IF=7A VGS=0V Tch=25°C
IF=7A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
900
3.0
5.0
25
250
100
1.54
2.00
4.1
8.2
920
1380
115
175
6.6
10
22
33
812
45
67.5
10.5
16
25
37.5
46
8.5
13
7
0.90
1.50
2.6
8.0
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
TO-220AB
Gate(G)
Source(S)
Drain(D)
200304
*4 VDS 900V
*5 VGS=-30V
<
=
*1 L=10.1mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph
*2 Tch 150°C
=
<
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相關代理商/技術參數 |
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| 2SK353900L | 功能描述:MOSFET N-CH 50V .1A S-MINI-3P RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3539G0L | 功能描述:MOSFET N-CH 50V .1A S-MINI-3P RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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