- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33500 > 2SK3546G (PANASONIC CORP) 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK3546G |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SSMINI3-F3, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 226K |
| 代理商： | 2SK3546G |
1
Silicon Junction FETs (Small Signal)
Publication date: June 2007
SJF00069AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3546G
Silicon N-Channel MOSFET
For switching
■ Features
High-speed switching
Wide frequency band
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = 10 A, VGS = 050
V
Drain-source cutoff current
IDSS
VDS
= 50 V, V
GS
= 0
1.0
A
Gate-source cutoff current
IGSS
VGS = ±7 V, VDS = 0
±5.0
A
Gate threshold voltage
Vth
ID = 1.0 A, VDS = 3 V
0.9
1.2
1.5
V
Drain-source ON resistance
RDS(on)
ID
= 10 mA, V
GS
= 2.5 V
8
15
ID = 10 mA, VGS = 4.0 V
6
12
Forward transfer admittance
Y
fs
ID = 10 mA, VDS = 3 V, f = 1 kHz
20
60
mS
Short-circuit forward transfer capacitance
Ciss
VDS
= 3 V, V
GS
= 0, f = 1 MHz
12
pF
(Common source)
Short-circuit output capacitance
Coss
VDS
= 3 V, V
GS
= 0, f = 1 MHz
7
pF
(Common source)
Reverse transfer capacitance
Crss
VDS
= 3 V, V
GS
= 0, f = 1 MHz
3
pF
(Common source)
Turn-on time *
ton
VDD
= 3 V, V
GS
= 0 V to 3 V, R
L
= 470
200
ns
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V, RL = 470
200
ns
Parameter
Symbol
Rating
Unit
Drain-source voltage
VDS
50
V
Gate-source voltage (Drain open)
VGSO
±7V
Drain current
ID
100
mA
Peak drain current
IDP
200
mA
Power dissipation
PD
125
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
55 to +150
°C
VOUT
VDD = 3 V
VGS = 3.0 V
50
470
100
F
VIN
90%
10%
90%
VOUT
ton
toff
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *:ton, toff test circuit
■ Package
Code
SSMini3-F3
Marking Symbol: 5F
Pin Name
1: Gate
2: Source
3: Drain
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3549-01 | 10 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 2SK3562 | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3568 | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3546G0L | 功能描述:MOSFET N-CH 50V .1A SS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3546J0L | 功能描述:MOSFET N-CH 50V .1A SS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK354700L | 功能描述:MOSFET N-CH 50V .1A SSS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3547G0L | 功能描述:MOSFET N-CH 50V .1A SSS-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3549-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 900V;RDS(ON) 1.08 Ohms;ID +/-40A;TO-247;PD 270W;VGS +/-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。