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參數資料
| 型號： | 2SK3547 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon n-channel MOSFET |
| 中文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, SSSMINI3-F1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 56K |
| 代理商： | 2SK3547 |
1
Silicon Junction FETs (Small Signal)
2SK3547
Silicon n-channel MOSFET
Publication date: July 2003
SJF00038AED
For switching
■
Features
High-speed switching
Wide frequency band
Gate-protection diode built-in
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
I
D
=
10
μ
A, V
GS
=
0
V
DS
=
50
V, V
GS
=
0
V
GS
=
±
7 V, V
DS
=
0
I
D
=
1.0
μ
A, V
DS
=
3 V
I
D
=
10 mA, V
GS
=
2.5 V
I
D
=
10 mA, V
GS
=
4.0 V
I
D
=
10 mA, V
DS
=
3 V, f
=
1 kHz
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
50
V
Drain-source cutoff current
1.0
μ
A
μ
A
Gate-source cutoff current
±
5.0
Gate threshold voltage
0.9
1.2
1.5
V
Drain-source ON resistance
8
15
6
12
Forward transfer admittance
Y
fs
C
iss
20
60
mS
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
12
pF
C
oss
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
7
pF
Reverse transfer capacitance (Common-source)
C
rss
t
on
t
off
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
V
DD
=
3 V, V
GS
=
0 V to 3 V, R
L
=
470
V
DD
=
3 V, V
GS
=
3 V to 0 V, R
L
=
470
3
pF
Turn-on time
*
200
ns
Turn-off time
*
200
ns
Parameter
Symbol
Rating
Unit
Drain-source voltage
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
50
V
Gate-source voltage (Drain open)
±
7
V
Drain current
100
mA
Peak drain current
200
mA
Power dissipation
100
mW
Channel temperature
125
°
C
°
C
Storage temperature
55 to
+
125
V
OUT
V
DD
=
3 V
V
GS
=
3.0 V
50
470
1
μ
F
V
IN
90%
10%
10%
90%
V
OUT
t
on
t
off
Unit: mm
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Marking Symbol: 5F
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: t
on
, t
off
test circuit
1: Gate
2: Source
3: Drain
SSSMini3-F1 Package
1
±
0
0
±
0
0
0
5
0
0
±
0
0
0.33
(0.40)
(0.40)
0.80
±
0.05
1.20
±
0.05
1
2
3
5
+0.05
0.10
+0.05
0.23
+0.05
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK354700L | 功能描述:MOSFET N-CH 50V .1A SSS-MINI-3P RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3547G0L | 功能描述:MOSFET N-CH 50V .1A SSS-MINI-3P RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3549-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 900V;RDS(ON) 1.08 Ohms;ID +/-40A;TO-247;PD 270W;VGS +/-3 |
| 2SK3549-01SC | 制造商:Fuji Electric 功能描述: |
| 2sk3550-01rsc | 制造商:Fuji Electric 功能描述: |
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