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參數資料
| 型號： | 2SK3560 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | Silicon N-channel power MOSFET For PDP/For high-speed switching |
| 中文描述： | 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-220C-G1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 76K |
| 代理商： | 2SK3560 |
Power MOSFETs
2SK3560
Silicon N-channel power MOSFET
1
Publication date: February 2004
SJG00033AED
For PDP/For high-speed switching
■
Features
Low on-resistance, low Q
g
High avalanche resistance
■
Absolute Maximum Ratings
T
C
=
25
°
C
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
V
DSS
I
D
=
1 mA, V
GS
=
0
I
DR
=
30 A, V
GS
=
0
V
DS
=
25 V, I
D
=
1 mA
V
DS
=
184 V, V
GS
=
0
V
GS
=
±
30 V, V
DS
=
0
V
GS
=
10 V, I
D
=
15 A
V
DS
=
25 V, I
D
=
15 A
V
DS
=
25 V, V
GS
=
0, f
=
1 MHz
230
V
Diode forward voltage
V
DSF
1.5
V
Gate threshold voltage
V
th
I
DSS
2
4
V
Drain-source cutoff current
100
μ
A
μ
A
m
Gate-source cutoff currentt
I
GSS
±
1
Drain-source on resistance
R
DS(on)
Y
fs
C
iss
55
74
Forward transfer admittance
8
19
S
Short-circuit forward transfer capacitance
(Common-source)
2
330
pF
Short-circuit output capacitance
(Common-source)
C
oss
356
pF
Reverse transfer capacitance
(Common-source)
C
rss
44
pF
Turn-on delay time
t
d(on)
V
DD
≈
100 V, I
D
= 15 A
R
L
≈
6.7
, V
GS
= 10 V
39
ns
Rise time
t
r
37
ns
Turn-off delay time
t
d(off)
221
ns
Fall time
t
f
46
ns
Reverse recovery time
t
rr
Q
rr
L
=
230
μ
H, V
DD
=
100 V
I
DR
=
15 A, di /dt
=
100 A/
μ
s
164
ns
Reverse recovery charge
853
nC
0
1
2
3
(8.9)
(10.2)
0 to 0.3
(
(
10.5
±
0.3
4.6
±
0.2
1.4
±
0.1
0.8
±
0.1
2.54
±
0.3
2.5
±
0.2
1.4
±
0.1
1
±
0
3
±
0
(
1
±
0
0
±
0
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
V
DSS
V
GSS
230
V
Gate-source surrender voltage
±
30
V
Drain current
I
D
30
A
Peak drain current
I
DP
P
D
120
A
Power
dissipation
50
W
T
a
=
25
°
C
3
Channel temperature
T
ch
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Internal Connection
G
S
D
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相關代理商/技術參數 |
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|---|---|
| 2SK3561 | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q) | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3561Q | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220NIS |
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