- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371556 > 2SK3579-01MR (FUJI ELECTRIC CO LTD) N-CHANNEL SILICON POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK3579-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 2SK3579-01MR |
1
TO-220F
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
V
ISO *6
Ratings
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
150
130
±23
±96
±20
23
242
20
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
5
2.1
40
Operating and storage
temperature range
Isolation Voltage
+150
-55 to +150
2
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
Item
2SK3579-01MR
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=150V V
GS
=0V
DS
=120V V
GS
=0V
V
GS
I
D
=11.5A
I
D
=11.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=11.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
μA
nA
m
S
pF
nC
%/°C
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
3.125
58.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
Rg
Rg/
Τ
ch
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Internal Resistance
(Tep.Confficient)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
=±20V
DS
=0V
V
GS
=10V
V
CC
=48V
I
D
=23A
V
GS
=10V
L=100μH T
ch
=25°C
I
F
=23A V
GS
=0V T
ch
=25°C
I
F
=23A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
kVrms
150
1.0
2.5
25
250
100
90
10
65
12
24
1470
190
2200
285
18
24
23
300
45
48
27
36
35
450
68
72
6
9
12
39
18
54.4
23.3
0.12
23
1.10
0.13
0.6
1.65
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tch<
=
*4 V
DS
250V *5 V
GS
=-20V *6 t=60sec f=60Hz
*3 I
F
=-I
D
, -di/dt=50A/μs, Vc<
DSS
, Tc<
<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK357 | HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS |
| 2SK3581-01L | N-CHANNEL SILICON POWER MOSFET |
| 2SK3581-01SJ | N-CHANNEL SILICON POWER MOSFET |
| 2SK3586 | N CHANNEL SILICON POWER MOSFET |
| 2SK3586-01 | N CHANNEL SILICON POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
| 2SK3580-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3586-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 19 Milliohms;ID +/-73A;TO-220AB;PD 270W;-55 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:270W ;RoHS Compliant: Yes |
| 2SK3586-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
| 2SK3586-01SC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。