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參數資料
| 型號： | 2SK3582TV-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-1H1A, VESM2, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 141K |
| 代理商： | 2SK3582TV-A |
2SK3582TV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3582TV
For ECM
Application for Ultra-compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD
100
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
IDSS CLASSIFICATION
A-Rank
80 to 200 A
B-Rank
170 to 300A
Marking
Equivalent Circuit
Precaution
There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use
it as a terminal.
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1H1A
Weight: 0.8mg (typ.)
VESM2
1.Drain
2.Source
3.Gate
1.2±0.05
0.8±0.05
1.
2±
0.
05
0.
8±
0.
1
0.
3±
0.
05
1
2
3
0.
4
0.
4
0.
2±
0.
05
0.
28±
0.
02
0.
09±
0.
03
Type Name
Top Gate
IDSS Classification Symbol
A :A-Rank
B :B-Rank
5
□
Lot Code
D
G
S
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3582TV | 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3582TV-A | 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK359-E | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92 |
| 2SK3594-01 | 45 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK359FRF | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3586-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 19 Milliohms;ID +/-73A;TO-220AB;PD 270W;-55 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:270W ;RoHS Compliant: Yes |
| 2SK3586-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
| 2SK3586-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3587-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3590-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31 Milliohms;ID +/-57A;TO-220AB;PD 270W 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB |
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