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參數資料
| 型號： | 2SK3596-01SJ |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 2SK3596-01SJ |
1
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AS *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
*3 I
F
-I
D
, -di/dt=50A/μs, Vcc=
DSS
, Tch=
=
Ratings
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
200
170
±30
±120
±30
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
30
387
20
5
1.67
135
+150
-55 to +150
Operating and storage
temperature range
*1 L=689
μ
H, Vcc=48V *2 Tch=
*4 V
DS
<
*5 V
GS
=-30V
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3596-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=200V V
GS
=0V
DS
=160V V
GS
=0V
V
GS
I
D
=15A V
GS
=10V
I
D
=15A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=15A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
200
3.0
V
V
μA
nA
m
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.926
75.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
CC
=100V
I
D
=30A
V
GS
=10V
L=100
μ
H T
ch
=25°C
I
F
=30A V
GS
=0V T
ch
=25°C
I
F
=30A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
66
10
50
25
12.5
1960
260
2940
390
18
20
17
53
19
51
15
16
27
30
26
80
29
76.5
22.5
24
30
1.10
0.19
1.4
1.65
Outline Drawings
(mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
www.fujielectric.co.jp/denshi/scd
P4
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