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參數(shù)資料
| 型號： | 2SK3633 |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 145K |
| 代理商： | 2SK3633 |
2SK3633
2005-05-30
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
MOS IV)
2SK3633
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.35
(typ.)
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
Low leakage current: IDSS = 100
A (VDS = 640 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
800
V
Drain-gate voltage (RGS = 20 k)
VDGR
800
V
Gate-source voltage
VGSS
±30
V
DC (Note 1)
ID
7
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
21
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
420
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15.7 mH, IAR = 7 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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| 2SK3633(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 800V 7A 150W TO-3P(N) |
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| 2SK3635-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 |
| 2SK3635-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape |
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