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參數資料
型號: 2SK3641-ZK
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關N溝道功率MOSFET
文件頁數: 1/8頁
文件大小: 167K
代理商: 2SK3641-ZK
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3641
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15969EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3641-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3641 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 14 m
MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 25 m
MAX. (V
GS
= 4.5 V, I
D
= 15 A)
Low C
iss
: C
iss
= 930 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±36
A
I
D(pulse)
±140
A
Total Power Dissipation (T
C
= 25°C)
P
T1
29
W
Total Power Dissipation
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
19
A
E
AS
36
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, L = 100
μ
H, V
GS
= 20
0 V
(TO-252)
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相關代理商/技術參數
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