- 您現在的位置：買賣IC網 > PDF目錄71108 > 2SK366 N-CHANNEL, Si, SMALL SIGNAL, JFET PDF資料下載
參數資料
| 型號： | 2SK366 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1C, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 174K |
| 代理商： | 2SK366 |
2SK366
2003-03-26
1
TOSHIBA Effect Transistor Silicon N Channel Junction Type
2SK366
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
High voltage: VGDS = 40 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 50 (typ.) (IDSS = 5 mA)
Small package
Complementary to 2SJ107
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-40
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IC = -100 mA
-40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
2.6
20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
12
28
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
30
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
6
pF
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
50
W
Note 1: IDSS classification GR: 2.6~6.5 mA, BL: 6~12 mA, V: 10~20 mA
Note 2: Condition of the typical value IDSS = 5 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3113B | SMALL SIGNAL TRANSISTOR |
| 2SC2878 | 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3112-B | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1954 | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1954-A | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3662(F) | 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS |
| 2SK3663-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R Tape & Reel 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,SSP3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-70 T/R |
| 2SK3664-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R |
| 2SK3666-2-TB-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3666-3-TB-E | 功能描述:JFET SWITCHING DEVICE RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。