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參數(shù)資料
| 型號： | 2SK3688-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 234K |
| 代理商： | 2SK3688-01S |
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
VDSX
600
Continuous drain current
ID
±16
Pulsed drain current
ID(puls]
±64
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
16
Maximum avalanche energy
EAS
242.7
Maximum drain-source dV/dt
dVDS/dt
20
Peak diode recovery dV/dt
dV/dt
5
Max. power dissipation
PD
1.67
270
Operating and storage
Tch
+150
temperature range
Tstg
Isolation voltage
VISO
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3688-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=8A
VGS=10V
ID=8A
VDS=25V
VCC=300V ID=8A
VGS=10V
RGS=10
Ω
V
μA
nA
Ω
S
pF
nC
A
V
μs
μC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.463
75.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250μA
VGS=0V
ID= 250μA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/μs Tch=25°C
V
A
V
A
mJ
kV/μs
W
°C
kVrms
600
3.0
5.0
25
250
10
100
0.42
0.57
6.5
13
1590
2390
200
300
11
17
29
43.5
16
24
58
87
812
34
51
12
18
10
15
16
1.00
1.50
0.68
7.8
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*2 IF -ID, -di/dt=50A/μs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
200509
=
<
*1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph
VGS=-30V
Tch 150°C
*1
VDS 600V
*2
Ta=25°C
Tc=25°C
t=60sec, f=60Hz
=
<
P4
http://www.fujielectric.co.jp/fdt/scd/
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| 2SK3690-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.8 Ohms;ID 4.5A;TO-220AB;PD 80W;VGS +/-30V |
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