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參數資料
| 型號： | 2SK3697-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 42 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 116K |
| 代理商： | 2SK3697-01 |
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
VDSX
600
Continuous Drain Current
ID
±42
±2.7
Pulsed Drain Current
ID(puls]
±168
Gate-Source Voltage
VGS
±30
Non-Repetitive
IAR
42
Maximum Avalanche current
Repetitive
IAR
21
Maximum Avalanche current
Non-Repetitive
EAS
828
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Peak Diode Recovery di/dt
-di/dt
100
Max. Power Dissipation
PD
600
2.50
Operating and Storage
Tch
+150
Temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3697-01
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=21A
VGS=10V
ID=21A
VDS=25V
VCC=300V
ID=21A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
mA
nA
S
pF
nC
A
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.208
50.0
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=42A
VGS=10V
L=861H Tch=25°C
IF=42A VGS=0V Tch=25°C
IF=42A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
A/s
W
°C
600
3.0
5.0
10
25
1.0
2.0
10
100
0.14
0.17
20
40
5100
7650
700
1050
48
72
60
90
135
180
270
30
45
105
160
44
65
30
45
42
1.10
1.70
160
250
1.00
2.5
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200407
VGS=-30V
Ta=25°C
Tch 25°C
Tch 150°C
Note *2
VDS 600V
Note *3
Note *4
Tc=25°C
Ta=25°C
=
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Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
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Note *2:StartingTch=25°C,L= 861
H,VCC=60V
See to the ‘Avalanche Energy’ graph
Note *3:IF -ID, -di/dt = 100A/
s,VCC BVDSS,Tch 150°C
Note *4:IF -ID, -dV/dt = 5kV/
s,VCC BVDSS,Tch 150°C
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相關代理商/技術參數 |
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