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參數資料
| 型號： | 2SK373Y |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應| N溝道| 1.2MA我（直）|到92 |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 2SK373Y |
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相關PDF資料 |
PDF描述 |
|---|---|
| 2SK376 | TRANSISTOR | JFET | N-CHANNEL | 60UA I(DSS) | SPAK |
| 2SK376J | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK376K | TRANSISTOR | JFET | N-CHANNEL | 150UA I(DSS) | SPAK |
| 2SK376L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK376M | TRANSISTOR | JFET | N-CHANNEL | 400UA I(DSS) | SPAK |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q,M) | 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(STA4,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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