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參數資料
| 型號： | 2SK3752-01R |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | N溝道功率MOSFET硅 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 121K |
| 代理商： | 2SK3752-01R |
1
Tch<
*1
VDS<
*2
Ta=25°C
Tc=25°C
t=60sec f=60Hz
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive and Non-Repetitive
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Symbol Ratings
V
DS
I
D
I
D(puls]
V
GS
I
AS
Unit Remarks
V
A
A
V
A
500
±16
±64
±30
16
E
AS
212.2
dV
DS
/dt
dV/dt
P
D
20
5
3.13
95
+150
-55 to +150
Operating and storage
temperature range
Isolation voltage
*1 L=1.52mH, Vcc=50V, Starting Tch=25°C,See to Avalanche Energy Graph
*2 I
F
<
D
, -di/dt=50A/μs, V
CC
<
DSS
, Tch<
T
ch
T
stg
V
ISO
2
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3752-01R
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
V
DS
GS
=0V
V
GS
=0V
V
GS
I
D
=7A V
GS
=10V
I
D
=7A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=7A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
μA
nA
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
1.32
40.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
=500V V
ch
=25°C
=400V V
ch
=125°C
=±30V
DS
=0V
V
CC
=250V
I
D
=14A
V
GS
=10V
L=1.52mH T
ch
=25°C
I
F
=14A V
GS
=0V T
ch
=25°C
I
F
=14A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
mJ
kV/s
kV/μs
W
°C
°C
kVrms
500
3.0
5.0
25
250
100
0.46
10
0.35
14
1600
160
7
18
16
35
8
33
12.5
10.5
7
2400
240
10.5
27
24
50
15
50
19
16
16
1.00
0.65
6.0
1.50
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
200309
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