- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33502 > 2SK3757 2 A, 450 V, 2.45 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3757 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2 A, 450 V, 2.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 252K |
| 代理商： | 2SK3757 |
2SK3757
2005-01-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)
High forward transfer admittance: |Yfs| = 1.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 450 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 k)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
2
Drain current
Pulse
(Note 1)
IDP
5
A
Drain power dissipation (Tc
= 25°C)
PD
30
W
Single pulse avalanche energy
(Note 2)
EAR
103
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
3
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
4.17
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1
3
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3761 | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3774-01SJ | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3774-01L | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3774-01S | 32 A, 300 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3784-01 | 2.4 A, 800 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3757(Q) | 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3758 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
| 2SK3758(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A TO-220AB |
| 2SK3758(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 5A Rdson Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3759 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。