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參數(shù)資料
| 型號(hào)： | 2SK3816-TL |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SMP-FD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 258K |
| 代理商： | 2SK3816-TL |
2SK3816
No.8054-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8054
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2404QA TS IM TB-00000610
2SK3816
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
40
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
160
A
Allowable Power Dissipation
PD
1.65
W
Tc=25
°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Enargy (Single Pulse) *1
EAS
60
mJ
Avalanche Current *2
IAV
40
A
Note : *1 VDD=20V, L=50H, IAV=40A
*2 L
≤50H, single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=20A
16
27
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=20A, VGS=10V
20
26
m
RDS(on)2
ID=20A, VGS=4V
28
40
m
Marking : K3816
Continued on next page.
http://semicon.sanyo.com/en/network
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| 2SK3817-DL-E | 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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