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參數資料
| 型號： | 2SK3843 |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1C, 4 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 180K |
| 代理商： | 2SK3843 |
2SK3843
2007-11-14
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (UMOSIII)
2SK3843
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Low drainsource ON resistance: RDS (ON) = 2.7 m (typ.)
High forward transfer admittance: |Yfs| = 120 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
40
V
Drain–gate voltage (RGS = 20 k)
VDGR
40
V
Gate–source voltage
VGSS
±20
V
DC
(Note 1)
ID
75
A
Drain current
Pulse (Note 1)
IDP
300
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single-pulse avalanche energy
(Note 2)
EAS
542
mJ
Avalanche current
IAR
75
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
1.0
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 H, IAR = 75 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
1
3
4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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