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參數資料
| 型號： | 2SK3875-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | FUJI POWER MOSFET Super FAP-G Series |
| 中文描述： | 13 A, 900 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 112K |
| 代理商： | 2SK3875-01 |
1
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
Ratings
900
900
13
±52
±30
Unit Remarks
V
V
A
A
V
Note *1
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-Repetitive
Maximum Avalanche current
Repetitive
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
I
AS
13
I
AR
E
AS
6.5
1006
E
AR
35.5
dV
DS
/dt
dV/dt
P
D
40
5
355
2.50
Operating and Storage
Temperature range
T
ch
T
stg
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermal characteristics
Item
2SK3875-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Test Conditions
Zero Gate Voltage Drain Current I
DSS
V
DS
=900V V
GS
=0V
V
DS
=720V V
GS
=0V
V
GS
I
D
=6.5A V
GS
=10V
I
D
=6.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=6.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
900
3.0
V
V
μA
nA
S
pF
nC
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.352
50.0
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
T
ch
=25°C
T
ch
=125°C
=±30V
DS
=0V
V
CC
=450V
I
D
=13A
V
GS
=10V
I
F
=13A V
GS
=0V T
ch
=25°C
I
F
=13A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
A
A
mJ
mJ
kV/μs
kV/μs
W
°C
°C
5.0
25
250
100
1.00
0.79
12
1750
220
13
20
12
60
15
46
14
17
1.10
4.5
25
6.0
2625
330
19.5
30
18
90
22.5
69
21
26
1.50
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Equivalent circuit schematic
200407
V
GS
=-30V
Note *2
Note *3
V
DS
=
Note *4
Tc=25°C
Ta=25°C
Note *1:Tch 150°C
Note *2:StartingTch=25°C,I
AS
=5.2A,L=67.5mH,
V
CC
=100V,R
G
=50
E
AS
limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:I
F
-I
D
, -di/dt=50A/μs,V
CC
BV
DSS
, Tc<
=
Gate(G)
Source(S)
Drain(D)
<
=
<
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